VLSI DEVICES & PROCESSING
The current research topics are in the area of Reliability of High-K
Dielectrics in nanoscale CMOS Devices. Reliability enhancement work is done
by deuterium implantation before gate oxide is grown. This involves
extensive device characterization such as gate oxide reliability, hot electron effect, interface states and low temperature characterization.
Electrical characteristics of thermally evaporated hafnium oxide is currently
being studied
VLSI Design
The VLSI Design research includes (i) A Synthesizable VHDL Model of the Exact Solution for Three Dimensional Hyperbolic Positioning Syste; (ii) On-Chip Implementation of Deadlock Avoidance in Wormhole Networks; and Transceiver design for sensors network.
Integrated Sensors
The other current topic is characterization and modeling of Three N-Type Implant Pinned Buried Photodetector using Charge Transfer Model for Ultra High Frame Rate Burst Image Sensors.
Remote monitoring of chemical sensors using local transceivers.