Silicon
nanocrystals are typically formed by implanting Si into SiO2
followed by annealing. The nanocrystals (diameter ranging from ~2 to 5.5 nm)
have significant potential for Si-based optoelectronic devices and memory applications.
Since the Si/SiO2 interface exists in silicon nanocrystals, the
electronic properties of these nanocrystals depend on the interface quality.
Deuterium annealing or implantation can quench the interface defects in
nanocrystals. The REU students will work on this project where they will study
the effect of deuterium implantation on the electronic properties of Si/SiO2
interface of silicon nanocrystals.
For the research activities, the undergraduate students will also help
the graduate students in experimental set up, taking measurements of numerous
samples, writing programs for data collection and analysis, take care of the
laboratory, and help the manuscript preparation for publications using the low
noise characterization system. The undergraduate students will be provided with
office spaces in order to have a place to work.