Link | Title |
| ArXiv.org
|
Articles on arXiv |
| High TC 2011 |
High-temperature superconductivity theory accurately predicts transition temperatures |
| Abedrabbo 2011 | Room-temperature photoluminescence from Er3+
in Si-Er-O and Si-Ge-Er-O thin films at high erbium concentrations |
| Abedrabbo 2011 | Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films |
| Abedrabbo 2011 | Analytical study of thermal annealing behaviour of erbium emission in Er2O3-sol-gel silica films |
| Harshman 2011 | High-TC superconductivity in ultra-thin crystals: implications for microscopic theory |
| Harshman 2011 | Theory of high-TC superconductivity: transition temperature |
| Harshman 2011 | Concerning the superconducting gap symmetry in YBa2Cu3O7-δ, YBa2Cu4O8, and La2-xSrxCuO4 determined from muon spin rotation in mixed states of crystals and powders |
| Padron 2011 | Integrated optical and electronic pressure sensor |
| Harshman 2010 | Coexisting holes and electrons in high-TC materials: implications from normal state transport |
| Abedrabbo 2010 | Optical activity at 1.55 µm in Si:Er:O deposited films |
| Dow 2010 | Symmetry of superconductivity in YBa2Cu3O7: s or d |
| Ravindra 2010 | Method of assembly using array of programmable magnets |
| Rivero 2010 | Indirect template method of magnetic field assisted assembly |
| Padron 2010 | Novel MEMS Fabry-Perot interferometric pressure sensor |
| Abedrabbo 2009 | Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing |
| Harshman 2008 | Isotope effect in high-Tc superconductors |
| Devrani 2008 | Two dimensional model of magnetic field assisted assembly |
|
| Padron 2008 | Modeling and design of an embossed diaphragm Fabry-Perot pressure sensor |
|
| Lepselter 2008 | Platinum and rhodium silicide-germanide optoelectronics |
| Dow 2007 | High-Tc superconductivity of cuprates and ruthenates |
| Fiory 2007 | Photo-thermal activation of shallow dopants implanted in silicon |
| Ravindra 2007 | Method of magnetic field assisted self-assembly |
| Rivero 2007 | Modeling of magnetic-field-assisted assembly of semiconductor devices |
| Walsh 2006 | Electron–hole superlattices in GaAs/AlxGa1-xAs multiple quantum wells |
| Rabus 2006 | Rapid thermal processing of silicon wafers with emissivity patterns |
| Ravindra 2006 | Lamp-based processing technologies for silicon solar cell manufacturing |
| Shet 2006 | Microassembly techniques: a review |
| Fiory 2005 | Fluxon pinning in the nodeless pairing state of superconducting YBa2Cu3O7 |
| Fiory 2005 | Rapid thermal processing for silicon
nanoelectronics applications |
| Li 2005 | Surface and bulk passivation layer of silicon nitride for solar cell applications |
| Mehta 2005 | Silicon-integrated uncooled infrared detectors : perspectives on thin films and microstructures |
| Harshman 2004 | Nodeless pairing state in single-crystal YBa2Cu3O7 |
| Shet 2004 | The magnetic field-assisted assembly of nanoscale semiconductor devices:A New Technique |
| Fiory 2003 | Light emission from silicon: some perspectives and applications |
| Ravindra 2003 | Modeling and simulation of emissivity of silicon-related materials and structures |
| Mehta 2003 | Flat-band voltage study Of atomic-layer-deposited aluminum-oxide subjected To spike thermal annealing |
| Fiory 2002 | Measurement of lattice vacancy-type defects in crystalline Si by a Au labeling technique |
| Fiory 2002 | Recent developments in rapid thermal processing |
| Fiory 2002 | Transient-enhanced diffusion in shallow junction formation |
| Ravindra | Silicon infrared light emitting diodes |
| Fiory 2001 | Boron and phosphorus dopant diffusion in crystalline Si by rapid thermal activation |
| Fiory 2001 | Rapid thermal activation and diffusion
of boron and phosphorus implants |
| Bourdelle 2001 | Implant dose and spike anneal temperature relationships |
| Fiory 2001 | Methods in microelectronics for rapid thermal annealing of implanted dopants |
| Fiory 2001 | Implant and anneal methods for PMOS gates |
| Fiory 2001 | Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2 |
| Hergenrother '01 | 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and A1203 gate dielectrics |
| Fiory 2000 | Spike annealing of implanted PMOS gates |
| Fiory 2000 | Methods in rapid thermal annealing |
| Fiory 2000 | Corona-charge evaluation of thermal SiO2 growth by single wafer and batch methods |
| Pelaz 1999 | Activation and deactivation of implanted B in Si |
| Agarwal 1999 | Boron-enhanced diffusion of boron from ultralow-energy ion implantation |
| Fiory 1999 | Electrical activation kinetics for shallow boron implants in silicon |