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The current research topics are in the
area of PLASMA PROCESSING INDUCED DAMAGE to Silicon (MOSFETs) and SiGe
Devices and damage elimination/reduction by nitrogen or deuterium
implantation before gate oxide is grown. This involves extensive
device characterization and modeling.
The other current topic is characterization and modeling of Three N-Type
Implant Pinned Buried Photodetector using Charge Transfer Model for
Ultra High Frame Rate Burst Image Sensors.