**Physics Dept - MtSE Joint Seminar**

**December 14, Friday (*SPECIAL
DAY*)**

**Engineering Topological Quantum Physics at Atomic Scale**

**Prof. Seongshik
Oh**

Rutgers, the State
University of New Jersey, New Brunswick, NJ

(Condensed Matter/Materials
Physics, Host: Ahn)

***TALK*: Tiernan 409, 11:30am - 12:30pm **

**(* SPECIAL
TIME/ROOM and NO TEA TIME *)**

***LUNCH*: Tiernan 406, 12:30pm - 4pm**

Since the notion of topological insulator
(TI) was envisioned about a decade ago, topology has become a new paradigm in
condensed matter physics. Realization of topology as a generic
property of materials has led to numerous predictions of unprecedented phenomena such
as magnetic dipoles, axion electrodynamics,
resistance-free conduction etc. However, only a very small subset of these
predictions have been materialized in real materials, especially in the
quantum regime. Here, I will show that defects have been the major culprit behind
this slow progress. Once we suppress these defects using various thin film
engineering tricks, a series of topological quantum effects such as quantized
Faraday/Kerr rotations, quantum Hall effects, topological quantum phase
transitions, zeroth Landau level physics etc. start to emerge above otherwise murky
ocean of classical topological effects. We are now entering the age of topological
quantum materials, but only as far as we can control the defects.