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- Physics
and Technology of High-k Gate Dielectrics 4
ECS Transactions Vol. 3 No. 3, 2006, Pennington, NJ
- Science and Technology of Dielectrics for Active and Passive
Photonic Devices
ECS Transactions Vol. 3 No. 11, 2006, Pennington, NJ
- Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and
Manufacturing
ECS Transactions Vol. 2 No. 1, 2006, Pennington, NJ
- Physics
and Technology of High-k Gate Dielectrics III
ECS Transactions Vol. 1 No. 5, 2006, Pennington, NJ
- Physics and Chemistry of SiO2 and Si-SiO2 Interface-5
ECS Transactions Vol. 1 No. 1, 2005, Pennington, NJ
- Dielectrics in Emerging Technologies PV 2003-01, Pennington, NJ
- Physics and Technology of High-K Gate Dielectrics - I PV 2002-28, Pennington, NJ
Magazine Articles
- High-k Dielectrics on
High-Mobility Substrates:
The Interface!
D. Misra, Interface,
vol. 20, No. 4, pp. 47-51, 2011.
- High-k Gate Dielectrics
D. Misra, H. Iwai and H. Wong, Interface,
vol. 14, No. 2, pp. 30-34, 2005.
- Electrical Techniques for the Characterization of Dielectric Films
T. Kundu, R. Garg, N.A. Chowdhury and D. Misra, Interface,
vol. 14, No. 3, pp. 17-19, 2005.
Journal Papers
- Role of Hydrogen in Ge/HfO2/Al Gate Stacks Subjected to Negative Bias
Temperature Instability
N. Rahim and D. Misra, Applied Physics Letters,
vol. 92, 023511, 2008.
- Charge Trapping at Deep States in
Hf-Silicate Based High-k Gate Dielectrics
N.A. Chowdhury and D. Misra, Journal of Electrochemical Society,
vol. 154, No. 2, pp. G30-G37, 2007.
- Trapping in Deep Defects under
Substrate Hot Electron Stress in TiN/Hf-Silicate Based Gate Stacks
N.A. Chowdhury, P. Srinivasan and D. Misra, Solid-State Electronics,
vol. 51, No. 1, pp. 80-88, 2007.
- Effect of Ge Surface Nitridation on the Ge/HfO2/Al MOS Devices
Reenu Garg, D. Misra and S. Guha, IEEE Transaction on Device and
Materials Reliability,
vol. 6, No. 3, pp. 455-460, 2006.
- Effect of Nitridation on
Low-Frequency (1/f) Noise
in n- and p-MOSFETS with HFO2 Gate Dielectrics
P. Srinivasan, E. Simoen, Z.M. Rittersma, W. Deweerd, L. Pantisano, C. Claeys, and D. Misra, Journal of Electrochemical Society,
vol. 153, No. 9, pp. G819-G825, 2006.
- Impact of the Interfacial Layer on
the Low-Frequency Noise (1/f) Behavior of MOSFETs With Advanced Gate Stacks
F. Crupi, P. Srinivasan, P. Magnone, E. Simoen, C. Pace, D. Misra, and
C. Claeys, IEEE Electron Device
Letters,
vol. 27, No. 8, pp. 688-691, 2006.
- Enhanced SiO2 Reliability on Deuterium-Implanted Silicon
T. Kundu and D. Misra, IEEE Transactions on Device and Materials
Reliability,
vol. 6, No. 2, pp. 288-291, 2006.
- Gate Electrode Effects on
low-frequency (1/f) noise in p-MOSFETs with high-k dielectrics
P. Srinivasan, E. Simoen, R. Singanamalla, H.Y. Yu, C. Claeys, and D. Misra, Journal of Electrochemical Society,
vol. 50, No. 6, pp. 992-998, 2006.
- Low-Frequency (1/f) Noise Performance of n- and p-MOSFETs with Poly-Si/Hf-Based Gate Dielectrics
P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, and D. Misra, Journal of Electrochemical Society,
vol. 153, No. 4, pp. G324-G329, 2006.
- Charge Trapping in Ultrathin Hafnium
Silicate/Metal Gate Stacks
P. Srinivasan, N.A. Chowdhury and D. Misra, IEEE Electron Device
Letters,
vol. 26, No. 12, pp. 913-915, 2005.
- Charge Transfer in a Multi-Implant Pinned-Buried
Photodetector
R.K. Jarwal and D. Misra, IEEE Transactionon Electron Devices, vol. 48,
No. 5, pp. 858-862, May 2001.