Project - Device & Material Characterization Lab, NJIT

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Study of Deuterium Implantation at SiO₂/Si Interface

An experimental study was conducted to see the dangling bond passivation effects of deuterium implantation at SiO₂/Si interface by measuring leakage current, High frequency , Quasi-Static Capacitance Voltage measurements, Charge to Breakdown measurements and more sophisticated measurements like High frequency and Low frequency Conductance Measurements for MOS Capacitors and Charge Pumping Measurements for MOSFETs to determine interface state density. High frequency conductance method was used to determine the distribution of interface state density between conduction band and valance band.