Device Characterization Laboratory has facility to perform electrical characterizations on 4", 5" as well as 6" wafers. Following characterizations can be performed:
- Current-Voltage Characterization
- Capacitance-Voltage Characterization [Both High Frequency and Quasi-static to determine Surface Potential (
s) and Interface State Density (Dit)].
- Time Dependent Dielectric Breakdown (TDDB) Measurements.
- Current, Voltage and Thermal Stress Measurements.
- Deep Level Transient Spectroscopy (DLTS)
- Magnetic field Measurements
To complete the test device structure, typically a Schottky diode or a MOS Capacitor, metallization is performed in Physical Vapor Deposition Unit (PDV) using shadow mask. PDV is advantageous as compared to sputtering which is known to create surface damage during the deposition due to the bombardment of high energy ions on the contact. To achieve proper ohmic contact the devices are annealed in furnace in N
2 ambient at a suitable temperature to complete the test device.
Following equipments are available in the lab:
