Facility

Device Characterization Laboratory has facility to perform electrical characterizations on 4", 5" as well as 6" wafers. Following characterizations can be performed:

• Current-Voltage Characterization
• Capacitance-Voltage Characterization [Both High Frequency and Quasi-static to determine Surface Potential (_s) and Interface State Density (D_it)].
• Time Dependent Dielectric Breakdown (TDDB) Measurements.
• Current, Voltage and Thermal Stress Measurements.
• Deep Level Transient Spectroscopy (DLTS)
• Magnetic field Measurements

To complete the test device structure, typically a Schottky diode or a MOS Capacitor, metallization is performed in Physical Vapor Deposition Unit (PDV) using shadow mask. PDV is advantageous as compared to sputtering which is known to create surface damage during the deposition due to the bombardment of high energy ions on the contact. To achieve proper ohmic contact the devices are annealed in furnace in N₂ ambient at a suitable temperature to complete the test device.

Following equipments are available in the lab:

• Cascade Microtech Probe Station
• HP4156B Precision Semiconductor Parameter Analyzer
• HP4145B Semiconductor Parameter Analyzer
• HP4140B pA meter/DC Voltage Source
• Denton DV 515
• Lindenberg Heavy-Duty Annealing Furnance
• Boonton Capacitance Meter (Model 7200)
• Boonton Digital Capacitance Meter (Model 72BD)
• Micromanipulator Hot Stage & Controller
• MMR Technologies Cryogenic Cooling System
• MMR Technologies K-20
• Workstations
• Clean Room Facility